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| NTE2581 Silicon NPN Transistor High Speed Switching Regulator Features: D High Breakdown Voltage and High Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Test Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.6A VCE = 5V, IC = 8A VCE = 5V, IC = 10mA Current Gain-Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage fT Cob VCE(sat) VBE(sat) VCE = 10V, IC = 1.6A VCB = 10V, f = 1MHz IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A Min - - 20 10 10 - - - - Typ - - - - - 20 160 - - Max 10 10 40 - - - - 0.8 1.5 MHz pF V V Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO VCEX(sus) ton tstg tf Test Conditions IC = 1mA, IE = 0 IC = 10mA, RBE = IE = 1mA, IC = 0 IC = 6A, IB1 = 0.6A, IB2 = -2.4A, L = 500H, Clamped IC = 10A, IB1 = 2A, IB2 = -4A, RL = 20, VCC = 200V, Note 2 Min 500 400 7 400 - - - Typ - - - - - - - Max - - - - 0.5 2.5 0.3 Unit V V V V s s s Note 2. Pulse Width = 20s, Duty Cycle 1%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
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